Compensation component and process for producing the component

US7126186B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Juergen Weber · Verden, DE
• Armin Willmeroth · Friedberg, DE
• Uwe Wahl · Munich, DE
• Markus Schmitt · Neubiberg, DE

Key dates

• Filing date: Dec 20, 2002
• Grant date: Oct 24, 2006
• Expiry date: Dec 20, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity type disposed in the drift zone. Higher doped zones of the first type are inlaid in a weaker doped environment of the second type closer to the first electrode and higher doped zones of the second type are inlaid in a weaker doped environment of the first type closer to the second electrode. The drift zone is complementary so that, in a direction between the electrodes, a more highly doped zone of the first type adjoins a more weakly doped environment of the first type, and a more weakly doped environment of the second type adjoins a more highly doped zone of the second type.