Electropolishing method for removing particles from wafer surface
US7128821B2 · kind B2 · utility
2Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Apr 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electropolishing method for removing potential device-contaminating particles from a wafer, is disclosed. The method includes immersing the wafer in an electropolishing electrolyte solution and removing defects and particles from the wafer by rotational friction between the wafer and the electrolyte solution in combination with electrolysis. The method is effective in removing particles from via openings of all sizes, including via openings having a width smaller than about 0.2 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.