Bonded wafer processing method
US7129172B2 · kind B2 · utility
31Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Mar 29, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment a method is disclosed. The method includes applying a photoresist layer to a first wafer, etching the first wafer, bonding the first wafer to a second wafer and thinning the first wafer; wherein an unsupported bevel portion of the first wafer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.