Method for etching a thin metal layer
US7129182B2 · kind B2 · utility
9Cited by
29References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2003 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Feb 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching a metal layer is described. That method comprises forming a metal layer on a substrate, then exposing part of the metal layer to a wet etch chemistry that comprises an active ingredient with a diameter that exceeds the thickness of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.