Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD)
US7129189B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Jun 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02178
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a phosphate-containing precursor gas to form aluminum phosphate on the substrate surface; exposing the substrate surface to an aluminum-containing precursor gas to form a second substantially saturated layer of aluminum-containing precursor on the substrate surface; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired diele…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.