Methods and procedures for engineering of composite conductive films by atomic layer deposition
US7129580B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2005 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Aug 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.