Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
US7132134B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 10, 2004 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Sep 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.