Organic anti-reflective coating composition and pattern forming method using the same
US7132217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2004 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Jul 15, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.