Magnetic random access memory array with proximate read and write lines cladded with magnetic material
US7132707B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 3, 2004 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Feb 22, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.