Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
US7135074B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 5, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Aug 5, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/912
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or smaller than 50% of the growth surface, which has an offset angle equal to or smaller than 60 degrees. The screw dislocation density in the single crystal generated from the generation region is higher than that in the other region. The single crystal includes a flat C-surface facet disposed on a growing surface of the single crystal. The C-surface facet overlaps at least one of parts of the growing surface provided by projecting the generation region in a direction perpendicular to the growth surface and in a direction parallel to a <0001> axis, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.