Semiconductor device and method of producing a high contrast identification mark
US7135356B2 · kind B2 · utility
4Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2002 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Sep 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A seconductor device (50) includes a semiconductor die (20) having a first surface (14) for forming electronic circuitry. A coating layer (16) formed on a second surface (15) of the semiconductor die has a color that contrasts with the color of the semiconductor die. The coating layer is patterned to expose a portion of the second surface to reveal information pertaining to the semiconductor device. The coating layer is patterned by directing a radiation beam (30) such as a laser to selectively remove material from the coating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.