Composite structure with high heat dissipation
US7135383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Dec 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.