Reliable low-k interconnect structure with hybrid dielectric
US7135398B2 · kind B2 · utility
9Cited by
25References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Apr 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.