Etch with ramping
US7135410B2 · kind B2 · utility
6Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Nov 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for etching a feature in an etch layer through a mask over a substrate. The substrate is placed in a process chamber. An etch plasma is provided to the process chamber, where the etch plasma begins to etch. A feature is etched in the etch layer with the etch plasma. At least one etch plasma parameter is ramped during the etching of the feature to optimize plasma parameters with the changing etch depth and the feature is etched with the ramped plasma until the feature is etched to a feature depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.