Inspection system by charged particle beam and method of manufacturing devices using the system
US7135676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2001 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Nov 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.