Semiconductor memory and its production process
US7135726B2 · kind B2 · utility
20Cited by
14References
38Claims
0Family size
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Key dates
| Filing date | Aug 10, 2001 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Aug 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0383
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory comprises: a fist conductivity type semiconductor substrate and one or more memory cells constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein at least one of said one or more memory cells is electrically insulated from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.