Generation and use of integrated circuit profile-based simulation information
US7136796B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2002 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Nov 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An exemplary method and system for generating integrated circuit (IC) simulation information regarding the effect of design and fabrication process decisionn includes creating and using a data store of profile-based information comprising metrology signal, structure profile data, process control parameters, and IC simulation attributes.An exemplary method and system for generating a simulation data store using signals off test gratings that model the effect of an IC design and/or fabrication process includes creating and using a simulation data store generated using test gratings that model the geometries of the IC interconnects. The interconnect simulation data store may be used in-line for monitoring electrical and thermal properties of an IC device during fabrication. Other embodiments include utilizing a metrology simulator and various combinations of a fabrication process simulator, a device simulator, and/or circuit simulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.