Light-emitting semiconductor device using group III nitrogen compound

US7138286B2 · kind B2 · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventors

• Katsuhide Manabe · Ichinomiya, JP
• Hisaki Kato · Hamamatsu, JP
• Michinari Sassa · Miyoshi, JP
• Shiro Yamazaki · Fukushima, JP
• Makoto Asai · Kariya, JP
• Naoki Shibata · Osaka, JP
• Masayoshi Koike · Miyoshi, JP

Key dates

• Filing date: Jun 3, 2005
• Grant date: Nov 21, 2006
• Expiry date: Jun 3, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8314

Abstract

A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.