Method of manufacturing a wafer
US7138325B2 · kind B2 · utility
19Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2004 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Mar 4, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/183
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method of manufacturing a semiconductor wafer that includes providing a substrate of a single crystalline first material that has an unfinished or rough surface, and epitaxially growing at least one layer of a second material directly on the unfinished or rough surface of the first material. The second material has a lattice that is different from that of the first material and the epitaxial growing of the second material is advantageously performed before a final surface finishing step on the unfinished or rough surface of the substrate to increase bonding between the materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.