Chemical-mechanical polishing proximity correction method and correction pattern thereof
US7138654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2004 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Nov 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical-mechanical polishing (CMP) proximity correction method for polishing a wafer is provided. The wafer has a polish area and a protected area. The method includes forming a material layer over the wafer to cover the polish area and the protected area and then forming a protective layer over the material layer. Thereafter, the protective layer is patterned so that the remaining protective layer is at a distance away from the boundary of the polish area to reduce shadowing effects. Because the boundary of the protective layer above the material layer recedes to an area at a distance away from polish area, the whole polish area can be cleanly polished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.