Via barrier layers continuous with metal line barrier layers at notched or dielectric mesa portions in metal lines
US7138714B2 · kind B2 · utility
6Cited by
10References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Feb 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an interconnect structure that includes a diffusion barrier which is positioned within the structure in a fashion that increases the reliability and lifetime of the interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.