Method of manufacturing a magnetoresistance effect device
US7140096B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2003 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Nov 26, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.