Patent · US Expired

Phase shift mask

US7141337B2 · kind B2 · utility

1Cited by
4References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 3, 2003
Grant dateNov 28, 2006
Priority date
Expiry dateSep 29, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/30
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.