Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same
US7141506B2 · kind B2 · utility
11Cited by
16References
8Claims
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Key dates
| Filing date | Jun 20, 2002 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Feb 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for evaluating a plane orientation dependence of a semiconductor substrate comprises: forming a hard mask on a semiconductor substrate having plane orientation (100); anisotropically etching the semiconductor substrate with use of the hard mask as a mask to obtain a surface oriented in a specific crystal orientation; and evaluating a plane orientation dependence of the semiconductor substrate by use of at least a portion of the surface oriented in a specific crystal orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.