Method for production of a semiconductor structure

US7141507B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Oliver Genz · Dresden, DE
• Markus Kirchhoff · Radeberg, DE
• Stephan Machill · Dresden, DE
• Alexander Reb · Dresden, DE
• Barbara Schmidt · Santa Rosa, US
• Momtchil Stavrev · Dresden, DE
• Maik Stegemann · Freital, DE
• Stephan Wege · Osterburken, DE

Key dates

• Filing date: Feb 25, 2005
• Grant date: Nov 28, 2006
• Expiry date: May 18, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a semiconductor structure including preparing a semiconductor substrate, and generating a lower first, a middle second and an upper third masking layer on a surface of the semiconductor substrate. The method further includes forming at least one first window in the upper third masking layer, structuring the middle second masking layer using the first window for transferring the first window, structuring the lower first masking layer using the first window for transferring the first window, and enlarging the first window to form a second window. The method for further includes restructuring the middle second masking layer using the second window for transferring the second window, structuring the semiconductor substrate, using the structured lower third masking layer, restructuring the lower first masking layer using the second window, and restructuring the semiconductor substrate using the restructured lower third masking layer.