Structures with planar strained layers

US7141820B2 · kind B2 · utility

Assignee

• AMBERWAVE SYSTEMS CORPORATION · US

Inventors

• Minjoo L. Lee · Cambridge, US
• Christopher Leitz · Nashua, US
• Eugene A. Fitzgerald · Windham, US

Key dates

• Filing date: Feb 27, 2004
• Grant date: Nov 28, 2006
• Expiry date: Apr 24, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A structure including a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer may be formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer and/or (ii) having an average height less than 10 nm.