Semiconductor device and production method therefor
US7141840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2003 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Feb 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/671
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.