High aspect ratio etch using modulation of RF powers of various frequencies
US7144521B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2003 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Nov 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.