Method of forming a semiconductor device and structure thereof
US7144784B2 · kind B2 · utility
6Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2004 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Nov 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for forming a semiconductor device is described. A semiconductor substrate has a first portion and a second portion. A first dielectric layer formed over the first portion of the semiconductor substrate and a second dielectric layer is formed over the second portion of the semiconductor substrate. A cap that may include silicon, such as polysilicon, is formed over the first dielectric layer. A first electrode layer is formed over the cap and a second electrode layer is formed over the second dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.