Method and apparatus for the production of process gas that includes water vapor and hydrogen formed by burning oxygen in a hydrogen-rich environment
US7144826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2002 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Sep 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02236
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
The aim of the invention is the simple and economical production of a hydrogen-rich process gas from water vapour and hydrogen, whereby the proportion of water vapour to hydrogen may be precisely controllable and reproducible. Said aim is achieved, with a method and device for the production of a process gas for the treatment of substrates, in particular semiconductor substrates, in which the oxygen for formation of a process gas, comprising water vapour and hydrogen, is burnt in a hydrogen-rich environment in a combustion chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.