Silicon layer for uniformizing temperature during photo-annealing
US7145104B2 · kind B2 · utility
15Cited by
15References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 26, 2004 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Feb 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2686
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for uniformizing the temperature distribution across a semiconductor wafer during radiation annealing of process regions formed in the wafer is disclosed. The method includes forming a silicon layer atop the upper surface of the wafer and irradiating the layer with one or more pulses of radiation having wavelengths that are substantially absorbed by the silicon layer. The silicon layer acts to uniformly absorb the one or more radiation pulses and then transfers the heat from the absorbed radiation to the process regions across the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.