Somit Talwar
34Patents
21h-index
17Co-inventors
78Inventor score
Filing activity: Jan 29, 1997 → Nov 3, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6479821B1 | Thermally induced phase switch for laser thermal processing | Physics | 273 | Expired |
| US6635588B1 | Method for laser thermal processing using thermally induced reflectivity switch | Electricity | 265 | Expired |
| US6747245B2 | Laser scanning apparatus and methods for thermal processing | Electricity | 106 | Expired |
| US5908307A | Fabrication method for reduced-dimension FET devices | Emerging Cross-Sectional Technologies | 94 | Expired |
| US6365476B1 | Laser thermal process for fabricating field-effect transistors | Electricity | 93 | Expired |
| US5888888A | Method for forming a silicide region on a silicon body | Electricity | 85 | Expired |
| US6274488A | Method of forming a silicide region in a Si substrate and a device having same | Electricity | 63 | Expired |
| US7154066B2 | Laser scanning apparatus and methods for thermal processing | Performing Operations; Transporting | 62 | Expired |
| US5956603A | Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6383956B2 | Method of forming thermally induced reflectivity switch for laser thermal processing | Electricity | 45 | Expired |
| US6380044B1 | High-speed semiconductor transistor and selective absorption process forming same | Electricity | 44 | Expired |
| US6303476A | Thermally induced reflectivity switch for laser thermal processing | Electricity | 40 | Expired |
| US7098155B2 | Laser thermal annealing of lightly doped silicon substrates | Performing Operations; Transporting | 36 | Expired |
| US7763828B2 | Laser thermal processing with laser diode radiation | Performing Operations; Transporting | 31 | Expired |
| US6300208A | Methods for annealing an integrated device using a radiant energy absorber layer | Electricity | 31 | Expired |
| US6645838B1 | Selective absorption process for forming an activated doped region in a semiconductor | Electricity | 30 | Expired |
| US6570656B1 | Illumination fluence regulation system and method for use in thermal processing employed in the fabrication of reduced-dimension integrated circuits | Performing Operations; Transporting | 29 | Expired |
| US6495390B2 | Thermally induced reflectivity switch for laser thermal processing | Electricity | 26 | Expired |
| US6777317B2 | Method for semiconductor gate doping | Electricity | 24 | Expired |
| US6420264B1 | Method of forming a silicide region in a Si substrate and a device having same | Electricity | 22 | Expired |
| US6297135A | Method for forming silicide regions on an integrated device | Electricity | 21 | Expired |
| US6825101B1 | Methods for annealing a substrate and article produced by such methods | Electricity | 20 | Expired |
| US7148159B2 | Laser thermal annealing of lightly doped silicon substrates | Performing Operations; Transporting | 19 | Expired |
| US6387803B2 | Method for forming a silicide region on a silicon body | Electricity | 19 | Expired |
| US7157660B2 | Laser scanning apparatus and methods for thermal processing | Electricity | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.