P-channel field-effect transistor with reduced junction capacitance
US7145191B1 · kind B1 · utility
31Cited by
30References
58Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2004 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zone contains a main portion (140M, 142M, 160M, or 162M) and a more lightly doped lower portion (140L, 142L, 160L, or 162L) underlying, and vertically continuous with, the main portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.