System and method for imprint lithography to facilitate dual damascene integration in a single imprint act
US7148142B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Jan 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1021
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A system and method are provided to facilitate dual damascene interconnect integration in a single imprint step. The method provides for creation of a translucent imprint mold with three-dimensional features comprising the dual damascene pattern to be imprinted. The imprint mold is brought into contact with a photopolymerizable organosilicon imaging layer deposited upon a transfer layer which is spin coated or otherwise deposited upon a dielectric layer of a substrate. When the photopolymerizable layer is exposed to a source of illumination, it cures with a structure matching the dual damascene pattern of the imprint mold. A halogen breakthrough etch followed by oxygen transfer etch transfer the vias from the imaging layer into the transfer layer. A second halogen breakthrough etch followed by a second oxygen transfer etch transfer the trenches from the imaging layer into the transfer layer. A dielectric etch transfers the pattern from the transfer layer into the dielectric layer. A metal fill process then fills the dual damascene openings of the dielectric layer with metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.