Process for oxide fabrication using oxidation steps below and above a threshold temperature
US7148153B2 · kind B2 · utility
2Cited by
11References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2002 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Oct 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.