Further method to pattern a substrate
US7150949B2 · kind B2 · utility
32Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2004 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Nov 30, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70291
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to methods for patterning substrates, such as reticles, masks or wafers, which reduce critical dimension variations, improving CD uniformity. In particular, it relates to tuning doses applied in passes of a multipass writing strategy to measurable characteristics of resists or radiation sensitive layers applied to the substrates. Particular writing strategies are described. Aspects of the present invention are described in the claims, specification and drawings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.