Method of fabricating semiconductor laser
US7151004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2004 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Oct 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In fabricating a semiconductor laser producing light with a wavelength of 770 to 810 nm, impurities are introduced into an MQW active layer near a light emitting facet of the laser to form a disordered region constituting a window layer. Pump light is applied to the window layer to generate photoluminescence whose wavelength λ dpl (nm) is measured. A blue shift amount λ bl (nm) is defined as the difference between the wavelength λ apl (nm) 0f photoluminescence generated by application of pump light to the active layer on the one hand, and the wavelength λ dpl (nm) of photoluminescence from the window layer under pump light irradiation on the other hand. The blue shift amount λ bl is referenced during the fabrication process in order to predict catastrophic optical damage levels of semiconductor lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.