Device and method for thermally treating semiconductor wafers

US7151060B2 · kind B2 · utility

Assignee

• Mattson Thermal Products GmbH · US

Inventors

• Georg Roters · Schneverdingen, DE
• Steffen Frigge · Chemnitz, DE
• Sing-Pin Tay · Ottawa, CA
• Yao Zhi Hu · San Jose, US
• Regina Hayn · Bernsdorf, DE
• Jens-Uwe Sachse · Dresden, DE
• Erwin Schoer · Dresden, DE
• Wilhelm Kegel · Laichingen, DE

Key dates

• Filing date: Jul 25, 2003
• Grant date: Dec 19, 2006
• Expiry date: Jul 25, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32105
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.