Impurity-based waveguide detectors
US7151881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2004 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | May 28, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical circuit including a semiconductor substrate; an optical waveguide formed in or on the substrate; and an optical detector formed in or on the semiconductor substrate, wherein the optical detector is aligned with the optical waveguide so as to receive an optical signal from the optical waveguide during operation, and wherein the optical detector has: a first electrode; a second electrode; and an intermediate layer between the first and second electrodes, the intermediate layer being made of a semiconductor material characterized by a conduction band, a valence band, and deep level energy states introduced between the conduction and valence bands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.