Method for reducing amine based contaminants
US7153776B2 · kind B2 · utility
4Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2003 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Nov 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing resist poisoning is provided. The method includes forming a first structure in a dielectric on a substrate and reducing amine related contaminants from the dielectric and the substrate created after the formation of the first structure. The method further includes forming a second structure in the dielectric. A first organic film may be formed on the substrate which is then heated and removed from the substrate to reduce the contaminant. Alternatively, a plasma treatment or cap may be provided. A second organic film is formed on the substrate and patterned to define a second structure in the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.