Method to eliminate striations and surface roughness caused by dry etch
US7153779B2 · kind B2 · utility
33Cited by
21References
63Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2003 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Nov 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etch process for forming a high aspect ratio contact opening through a silicon oxide layer is disclosed. The silicon oxide layer is plasma etched using etch gases that include at least one organic fluorocarbon gas. At least one etch gas is used that includes one or more nitrogen-comprising gases to deposit a surface polymeric material during the etching for maintaining a masking layer over the silicon oxide layer. The method of the invention achieves a complete and anistropic etching of a contact opening having a high aspect ratio and the desired dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.