Method of switching an MRAM cell comprising bidirectional current generation
US7154771B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Feb 9, 2005 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Feb 14, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of switching a magnetoresistive memory (MRAM) cell including the following steps: providing an MRAM cell having a magnetic tunnel junction including first and second magnetic regions; the first magnetic region exhibiting a fixed magnetization, the second magnetic region exhibiting a free magnetization which is free to be switched between the same and opposite directions with respect to the fixed magnetization of the first magnetic region; the free magnetization being magnetically coupled to magnetic fields generated by first and second currents made to flow through first and second current lines, respectively; switching of the free magnetization by currents made to flow through the first and second current lines; and inverting of flowing directions of first and/or second currents for the switching of the free magnetization such that a respective time-averaged mean value of the first and/or second currents becomes essentially equal to zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.