Variable capactor structure and method of manufacture

US7157766B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Jing-Horng Gau · Baoshan, TW
• Anchor Chen · Pingtung City, TW

Key dates

• Filing date: Aug 18, 2004
• Grant date: Jan 2, 2007
• Expiry date: Sep 29, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/215

Abstract

A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped well has a cavity. The first type ion-doped buried layer is in the substrate underneath the first type ion-doped well. The first type ion-doped buried layer and the first type ion-doped well are connected. The second type ion-doped region is at the bottom of the cavity of the first type ion-doped well. The conductive layer is above and in connection with the first type ion-doped buried layer.