Selective refractory metal and nitride capping
US7157798B1 · kind B1 · utility
54Cited by
35References
13Claims
0Family size
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Key dates
| Filing date | Nov 8, 2004 |
| Grant date | Jan 2, 2007 |
| Priority date | — |
| Expiry date | Nov 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76889
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.