Multistep remote plasma clean process
US7159597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2002 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Feb 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.