Methods for integrated implant monitoring
US7160742B2 · kind B2 · utility
1Cited by
57References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 19, 2004 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Aug 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.