Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same
US7160776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2005 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Jul 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
Methods of forming a gate structure of a non-volatile memory device include forming a gate pattern having a control gate on a semiconductor substrate. An oxidation-preventing layer is formed on the control gate in a process chamber while maintaining a substantially oxygen free atmosphere in the process chamber. An oxide spacer is formed on a sidewall of the gate pattern with the oxidation-preventing layer thereon in the process chamber. Forming an oxidation-preventing layer may include exposing the gate pattern to a first gas in the process chamber and forming an oxide spacer may include exposing the gate pattern to a second gas including oxygen in the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.