Method to perform selective atomic layer deposition of zinc oxide
US7160819B2 · kind B2 · utility
37Cited by
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15Claims
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Key dates
| Filing date | Apr 25, 2005 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Sep 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H2O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.