Trench mosfet with field relief feature
US7161208B2 · kind B2 · utility
15Cited by
23References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2003 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | May 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.