High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same
US7161220B2 · kind B2 · utility
9Cited by
11References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 11, 2006 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Jan 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.